BD809G
ObsoleteON Semiconductor
HIGH POWER NPN BIPOLAR TRANSISTOR
BD809G
ObsoleteON Semiconductor
HIGH POWER NPN BIPOLAR TRANSISTOR
Description
General part information
BD809G
The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
Technical Specifications
Parameters and characteristics for this part
| Specification | BD809G |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 15 |
| Frequency - Transition | 1.5 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power - Max | 90 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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CAD
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Documents
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