Description
General part information
IPW65R190E6FKSA1
MOSFET N-CH 650V 20.2A TO247-3
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW65R190E6FKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20.2 A, 20.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 73 nC |
| Input Capacitance (Ciss) (Max) | 1620 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-1 |
| Power Dissipation (Max) | 151 W |
| Rds On (Max) | 190 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available