NTBL023N065M3S
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 23 MOHM, 650 V, M3S, TOLL
NTBL023N065M3S
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 23 MOHM, 650 V, M3S, TOLL
Description
General part information
NTBL023N065M3S
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).
Technical Specifications
Parameters and characteristics for this part
| Specification | NTBL023N065M3S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 77 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 69 nC |
| Input Capacitance (Ciss) (Max) | 1950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | 8-HPSOF |
| Power Dissipation (Max) | 312 W |
| Rds On (Max) | 32.6 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
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