Description
General part information
IPDQ65R080CFD7XTMA1
Infineon’s650 V CoolMOS™ CFD7superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFETfamily, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPDQ65R080CFD7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 36 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 50 nC |
| Input Capacitance (Ciss) (Max) | 2513 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22-1 |
| Power Dissipation (Max) | 223 W |
| Rds On (Max) | 80 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources