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71V424L10PHGI

71V424L10PHGI

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Renesas Electronics Corporation

3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT

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71V424L10PHGI

71V424L10PHGI

Active
Renesas Electronics Corporation

3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT

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Description

General part information

71V424 Series

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Technical Specifications

Parameters and characteristics for this part

Specification71V424L10PHGI
Access Time10 ns
Memory Depth512 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size4 Mbit
Memory TypeVolatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name44-TSOP II, 44-TSOP
Package Width10.16 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)3 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

Pricing

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