IRF7910TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 12V 10A 8SO

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Obsolete

Infineon Technologies

MOSFET 2N-CH 12V 10A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7910TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1730 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drain to Source Voltage (Vdss)
Infineon Technologies IRF7910TRPBF	26 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	1730 pF	8-SO	2 W	2 V	15 mOhm	Surface Mount	-55 °C	150 °C	10 A	Logic Level Gate	12 V
Infineon Technologies IRF7910PBF	26 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	1730 pF	8-SO	2 W	2 V	15 mOhm	Surface Mount	-55 °C	150 °C	10 A	Logic Level Gate	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$