
FDB024N08BL7
ActiveON Semiconductor
MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES

FDB024N08BL7
ActiveON Semiconductor
MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES
Description
General part information
FDB024N08BL7
RDS(on) = 1.7 mO ( Typ.) @ VGS = 10 V, ID = 100 A
Low FOM RDS(on) *QG
Low Reverse Recovery Charge, Qrr = 112 nC
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB024N08BL7 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 178 nC |
| Input Capacitance (Ciss) (Max) | 13530 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | TO-263-7, D2PAK |
| Power Dissipation (Max) | 246 W |
| Rds On (Max) | 2.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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