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FDB024N08BL7

FDB024N08BL7

Active
ON Semiconductor

MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES

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FDB024N08BL7

FDB024N08BL7

Active
ON Semiconductor

MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES

Find alt

Description

General part information

FDB024N08BL7

RDS(on) = 1.7 mO ( Typ.) @ VGS = 10 V, ID = 100 A

Low FOM RDS(on) *QG

Low Reverse Recovery Charge, Qrr = 112 nC

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB024N08BL7
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)178 nC
Input Capacitance (Ciss) (Max)13530 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads6 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)246 W
Rds On (Max)2.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part