DMG4N65CT
ObsoleteMOSFET N CH 650V 4A TO220-3
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DMG4N65CT
ObsoleteMOSFET N CH 650V 4A TO220-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMG4N65CT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 2.19 W |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMG4N65CTI Series
DIODES has been fabricated using an advanced high voltage MOSFET process , This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Documents
Technical documentation and resources