2SD1230
ActiveON Semiconductor
TRANS NPN DARL 100V 8A TO-3PB
2SD1230
ActiveON Semiconductor
TRANS NPN DARL 100V 8A TO-3PB
Description
General part information
2SD1230
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20MHz 2.5 W Through Hole TO-3PB
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SD1230 |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 1500 |
| Frequency - Transition | 20 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3PB |
| Power - Max | 2.5 VA |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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