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S1JR2 - PE1DAH

S1JR2

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

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S1JR2 - PE1DAH

S1JR2

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationS1JR2
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)1500 ns
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-214AC (SMA)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

S1J Series

Diode 600 V 1A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources

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