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ONSEMI FDC5661N-F085

FDC5661N-F085

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 4.3 A, 0.038 OHM, SUPERSOT, SURFACE MOUNT

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ONSEMI FDC5661N-F085

FDC5661N-F085

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 4.3 A, 0.038 OHM, SUPERSOT, SURFACE MOUNT

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Description

General part information

FDC5661N-F085

R DS(on) = 47m O at V GS = 10V, I D = 4.3A

R DS(on) = 60m O at V GS = 4.5V, I D = 4A

Typical Q g(TOT) = 14.5nC at V GS = 10V

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC5661N-F085
Current - Continuous Drain (Id) (Ta)4.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)19 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)763 pF, 763 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package NameSuperSOT™-6
Power Dissipation (Max)1.6 W
QualificationAEC-Q101
Rds On (Max)47 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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