DMN61D9U-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
DMN61D9U-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Description
General part information
DMN61D9U-7
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN61D9U-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 380 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.4 nC |
| Input Capacitance (Ciss) (Max) | 28.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 370 mW |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources