STW6N95K5

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STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE

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STW6N95K5

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STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STW6N95K5

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW6N95K5 Series

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology
STMicroelectronics STW6N95K5	10 V	90 W	N-Channel	950 V	Through Hole	13 nC	30 V	TO-247-3	TO-247-3	450 pF	1.25 Ohm	9 A	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.21
		10	$ 2.11
		25	$ 1.29
		100	$ 1.22
		250	$ 1.17
		600	$ 1.13
Digikey	Tube	1	$ 2.76
		30	$ 2.22
		120	$ 1.83
		510	$ 1.55
		1020	$ 1.31
		2010	$ 1.25
		5010	$ 1.20
Newark	Each	1	$ 3.37
		10	$ 2.09
		100	$ 1.93
		500	$ 1.82
		1200	$ 1.77
		3000	$ 1.76

Description

General part information

STW6N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

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STW6N95K5

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STW6N95K5

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STW6N95K5 Series

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STW6N95K5 Series

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Datasheet

Technical Specifications

STW6N95K5 Series