FDG6303N
ObsoleteDUAL MOSFET, N CHANNEL, 25 V, 500 MA, 0.34 OHM
FDG6303N
ObsoleteDUAL MOSFET, N CHANNEL, 25 V, 500 MA, 0.34 OHM
Description
General part information
FDG6303N
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDG6303N |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 500 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 2.3 nC |
| Input Capacitance (Ciss) (Max) | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88 (SC-70-6) |
| Power - Max | 300 mW |
| Rds On (Max) | 450 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources