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FDN342P

FDN342P

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ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 2 A, 0.062 OHM, SUPERSOT, SURFACE MOUNT

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FDN342P

FDN342P

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 2 A, 0.062 OHM, SUPERSOT, SURFACE MOUNT

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Description

General part information

FDN342P

The FDN342P is a 2.5V specified P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for load switch and battery protection applications requiring a wide range of gate drive voltage ratings (2.5 to 12V).

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN342P
Current - Continuous Drain (Id) (Ta)2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)9 nC
Input Capacitance (Ciss) (Max)635 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)500 mW
Rds On (Max)80 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

3D models and CAD resources for this part