6116SA15TPG

Obsolete

Renesas Electronics Corporation

5.0V 2K X 8 ASYNCHRONOUS STATIC RAM

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6116SA15TPG

Obsolete

Renesas Electronics Corporation

5.0V 2K X 8 ASYNCHRONOUS STATIC RAM

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Description Specifications Series Pricing CAD Documents

Description

General part information

6116 Series

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Technical Specifications

Parameters and characteristics for this part

Specification	6116SA15TPG

Access Time	15 ns
Memory Depth	2 K
Memory Format	SRAM
Memory Interface (Type)	Parallel
Memory Size	2 KB
Memory Type	Volatile
Memory Width	8 bit
Mounting Type	Through Hole
Operating Temperature (Max)	70 °C
Operating Temperature (Min)	0 °C
Package Length	0.3 in
Package Name	24-DIP, 24-PDIP
Package Width	7.62 mm
Technology	SRAM - Asynchronous
Voltage - Supply (Maximum)	5.5 V
Voltage - Supply (Minimum)	4.5 V
Write Cycle Time - Page	15 ns
Write Cycle Time - Word	15 ns

6116 Series

Part	Access Time	Memory Size	Package Name	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Technology	Memory Width	Memory Depth	Memory Interface (Type)	Memory Format	Mounting Type	Package Width	Package Length	Memory Type	Operating Temperature (Max)	Operating Temperature (Min)	Write Cycle Time - Word	Write Cycle Time - Page
Renesas Electronics Corporation 6116SA19TPGI	19 ns	2 KB	24-DIP 24-PDIP	5.5 V	4.5 V	SRAM - Asynchronous	8 bit	2 K	Parallel	SRAM	Through Hole	7.62 mm	0.3 in	Volatile	85 °C	-40 °C	19 ns	19 ns
Renesas Electronics Corporation 6116SA15TPGI	15 ns	2 KB	24-DIP 24-PDIP	5.5 V	4.5 V	SRAM - Asynchronous	8 bit	2 K	Parallel	SRAM	Through Hole	7.62 mm	0.3 in	Volatile	85 °C	-40 °C	15 ns	15 ns
Renesas Electronics Corporation 6116SA35SOG8	35 ns	2 KB	24-SOIC	5.5 V	4.5 V	SRAM - Asynchronous	8 bit	2 K	Parallel	SRAM	Surface Mount	7.5 mm	0.295 in	Volatile	70 °C	0 °C	35 ns	35 ns
Renesas Electronics Corporation 6116SA35SOG	35 ns	2 KB	24-SOIC	5.5 V	4.5 V	SRAM - Asynchronous	8 bit	2 K	Parallel	SRAM	Surface Mount	7.5 mm	0.295 in	Volatile	70 °C	0 °C	35 ns	35 ns
Renesas Electronics Corporation 6116SA19TPG	19 ns	2 KB	24-DIP 24-PDIP	5.5 V	4.5 V	SRAM - Asynchronous	8 bit	2 K	Parallel	SRAM	Through Hole	7.62 mm	0.3 in	Volatile	70 °C	0 °C	19 ns	19 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

6116SA_LA Data Sheet

6116SA15TPG | Datasheet