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FDT86106LZ

FDT86106LZ

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 3.2 A, 100 V, 0.08 OHM, 10 V, 1.5 V

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FDT86106LZ

FDT86106LZ

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 3.2 A, 100 V, 0.08 OHM, 10 V, 1.5 V

Find alt

Description

General part information

FDT86106LZ

Max rDS(on) = 108 mO at VGS = 10 V, ID = 3.2 A

Max rDS(on) = 153 mO at VGS = 4.5 V, ID = 2.7 A

High performance trench technology for extremely low rDS(on)

Technical Specifications

Parameters and characteristics for this part

SpecificationFDT86106LZ
Current - Continuous Drain (Id) (Ta)3.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)7 nC
Input Capacitance (Ciss) (Max)315 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223-4
Power Dissipation (Max)2.2 W
Rds On (Max)108 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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