BD135G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 45 V, 1.5 A, 1.25 W, TO-225, THROUGH HOLE
BD135G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 45 V, 1.5 A, 1.25 W, TO-225, THROUGH HOLE
Description
General part information
BD135G
Collector-Emitter Sustaining Voltage 45 V
High DC Current Gain
BD 135, 137, 139 are complementary with BD 136, 138, 140
Technical Specifications
Parameters and characteristics for this part
| Specification | BD135G |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 40 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-225-3, TO-126 |
| Power - Max | 1.25 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
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CAD
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Documents
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