Specification	TP65H050G4BS

Current - Continuous Drain (Id) (Tc)	34 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1000 pF, 1000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263
Power Dissipation (Max)	119 W
Rds On (Max)	60 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max)	4.8 V

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