
71V3577S75BGI
ObsoleteRenesas Electronics Corporation
3.3V 128K X 36 SYNCHRONOUS FLOWTHROUGH SRAM WITH 3.3V I/O

71V3577S75BGI
ObsoleteRenesas Electronics Corporation
3.3V 128K X 36 SYNCHRONOUS FLOWTHROUGH SRAM WITH 3.3V I/O
Description
General part information
71V3577 Series
The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V3577S75BGI |
|---|---|
| Access Time | 7.5 ns |
| Clock Frequency | 117 MHz |
| Memory Depth | 128 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4.5 Mbit |
| Memory Type | Volatile |
| Memory Width | 36 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 119-BGA |
| Package Length | 14 mm |
| Package Name | 119-PBGA |
| Package Width | 22 mm |
| Technology | SRAM - Synchronous, SDR |
| Voltage - Supply (Maximum) | 3.465 V |
| Voltage - Supply (Minimum) | 3.135 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources