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DMN3110SQ-7

DMN3110SQ-7

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMN3110SQ-7

DMN3110SQ-7

Active
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Find alt

Description

General part information

DMN3110SQ-7

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3110SQ-7
Current - Continuous Drain (Id) (Ta)2.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)8.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)305.8 pF, 305.8 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)740 mW
QualificationAEC-Q101
Rds On (Max)73 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part