DMN2053UWQ-13

Active

Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMN2053UWQ-13

Active

Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2053UWQ-13

Current - Continuous Drain (Id) @ 25°C	2.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	470 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

DMN2053UFDBQ Series

Dual N-Channel Enhancement Mode MOSFET

Part	Configuration	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN2053UVTQ-13	2 N-Channel (Dual)	35 mOhm	1 V	700 mW	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	20 V	MOSFET (Metal Oxide)	369 pF	4.6 A	AEC-Q101	Automotive	3.6 nC
Diodes Inc DMN2053UWQ-13		56 mOhm	1 V		-55 °C	150 °C	SC-70 SOT-323	Surface Mount	20 V	MOSFET (Metal Oxide)		2.9 A	AEC-Q101	Automotive	3.6 nC	470 mW	1.5 V 4.5 V	12 V	N-Channel	SOT-323
Diodes Inc DMN2053UWQ-7		56 mOhm	1 V		-55 °C	150 °C	SC-70 SOT-323	Surface Mount	20 V	MOSFET (Metal Oxide)		2.9 A	AEC-Q101	Automotive	3.6 nC	470 mW	1.5 V 4.5 V	12 V	N-Channel	SOT-323
Diodes Inc DMN2053UVT-7	2 N-Channel (Dual)	35 mOhm	1 V	700 mW	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	20 V	MOSFET (Metal Oxide)	369 pF	4.6 A			3.6 nC
Diodes Inc DMN2053UFDBQ-13	2 N-Channel (Dual)	35 mOhm	1 V	820 mW	-55 °C	150 °C	6-UDFN Exposed Pad	Surface Mount	20 V	MOSFET (Metal Oxide)	369 pF	4.6 A	AEC-Q101	Automotive						U-DFN2020-6 (Type B)	7.7 nC
Diodes Inc DMN2053UFDB-13	2 N-Channel (Dual)	35 mOhm	1 V	820 mW	-55 °C	150 °C	6-UDFN Exposed Pad	Surface Mount	20 V	MOSFET (Metal Oxide)	369 pF	4.6 A								U-DFN2020-6 (Type B)	7.7 nC
Diodes Inc DMN2053UVT-13	2 N-Channel (Dual)	35 mOhm	1 V	700 mW	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	20 V	MOSFET (Metal Oxide)	369 pF	4.6 A			3.6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	10000	$ 0.06
		30000	$ 0.06
		50000	$ 0.05

Description

General part information

DMN2053UFDBQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general-purpose interfacing switches, power-management functions, DC-DC converters, and analog switches.

DMN2053UWQ-13

Deep-Dive with AI

DMN2053UWQ-13

Deep-Dive with AI

Technical Specifications

DMN2053UFDBQ Series

Pricing

Description

DMN2053UFDBQ Series

Documents

Recommended Soldering Techniques

Datasheet

Package PDF

Datasheet

DMN2053UFDBQ Series