
BC856BMTF
ActiveON Semiconductor
PNP EPITAXIAL SILICON TRANSISTOR

BC856BMTF
ActiveON Semiconductor
PNP EPITAXIAL SILICON TRANSISTOR
Description
General part information
BC856BMTF
PNP EPITAXIAL SILICON TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | BC856BMTF |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 15 nA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power - Max | 310 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
Pricing
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CAD
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Documents
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