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IXFB170N30P

IXFB170N30P

Active
LITTELFUSE

DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

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IXFB170N30P

IXFB170N30P

Active
LITTELFUSE

DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

Find alt

Description

General part information

IXFB170N30P

DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFB170N30P
Current - Continuous Drain (Id) (Tc)170 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)258 nC
Input Capacitance (Ciss) (Max)20000 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-264-3, TO-264AA
Package NamePLUS264™
Power Dissipation (Max)1250 W
Rds On (Max)18 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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Documents

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