NCP51560BBDWR2G
ActiveGATEDRIVER, ISOLATED, MOSFET, SIC MOSFET ROHS COMPLIANT: YES
NCP51560BBDWR2G
ActiveGATEDRIVER, ISOLATED, MOSFET, SIC MOSFET ROHS COMPLIANT: YES
Description
General part information
NCP51560BBDWR2G
The NCP51560 are isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51560 offers short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. The NCP51560 offers other important protection functions such as independent under-voltage lockout for both gate drivers.
Technical Specifications
Parameters and characteristics for this part
| Specification | NCP51560BBDWR2G |
|---|---|
| Approval Agency | VDE, UL, CQC |
| Common Mode Transient Immunity (Min) | 200 V/ns |
| Current - Output High | 2.6 A |
| Current - Output Low | 7 A |
| Current - Peak Output (Max) | 9 A |
| Current - Peak Output (Min) | 4.5 A |
| Fall Time (Typ) | 10 ns |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Number of Channels | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.295 in |
| Package Name | 16-SOIC |
| Package Width | 7.5 mm |
| Propagation Delay tpHL (Max) | 60 ns |
| Propagation Delay tpLH (Max) | 60 ns |
| Pulse Width Distortion (Max) | 5 ns |
| Qualification | AEC-Q100 |
| Rise Time (Typ) | 11 ns |
| Technology | Magnetic Coupling |
| Voltage - Isolation | 5000 Vrms |
| Voltage - Output Supply (Max) | 30 V |
| Voltage - Output Supply (Min) | 9.5 V |
Pricing
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