SCTW100N65G2AG
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 100 A, 26 MILLIOHMS, HIP247, 3 PINS, THROUGH HOLE
SCTW100N65G2AG
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 100 A, 26 MILLIOHMS, HIP247, 3 PINS, THROUGH HOLE
Description
General part information
SCTW100N65G2AG
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTW100N65G2AG |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 162 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 3315 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | HiP247™ |
| Power Dissipation (Max) | 420 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 26 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 5 V |
Pricing
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