Description
General part information
IRF7389PBF
IR MOSFET™ N+P DUAL ; SO-8 PACKAGE; 29 MOHM;
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7389PBF |
|---|---|
| Configuration | N, P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 33 nC |
| Input Capacitance (Ciss) (Max) | 650 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC, 8-SO |
| Package Width | 3.9 mm |
| Power - Max | 2.5 VA |
| Rds On (Max) | 29 mOhm, 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources