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IPD50N10S3L16ATMA2

IPD50N10S3L16ATMA2

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INFINEON

MOSFET_(75V 120V(

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IPD50N10S3L16ATMA2

IPD50N10S3L16ATMA2

Active
INFINEON

MOSFET_(75V 120V(

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Description

General part information

IPD50N10S3L16ATMA2

N-Channel 100 V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD50N10S3L16ATMA2
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)64 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4180 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-11
Power Dissipation (Max)100 W
QualificationAEC-Q101
Rds On (Max)15 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

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Documents

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