PCDB0865G1_R2_00001
ActivePanjit International Inc.
DIODE SIL CARBIDE 650V 8A TO263
PCDB0865G1_R2_00001
ActivePanjit International Inc.
DIODE SIL CARBIDE 650V 8A TO263
Description
General part information
PCDB0865G1_R2_00001
DIODE SIL CARBIDE 650V 8A TO263
Technical Specifications
Parameters and characteristics for this part
| Specification | PCDB0865G1_R2_00001 |
|---|---|
| Capacitance | 296 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 60 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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