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DMT63M6LPSW-13

DMT63M6LPSW-13

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Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI506

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DMT63M6LPSW-13

DMT63M6LPSW-13

Active
Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI506

Find alt

Description

General part information

DMT63M6LPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT63M6LPSW-13
Current - Continuous Drain (Id) (Tc)96 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44.8 nC
Input Capacitance (Ciss) (Max)2479 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePowerDI5060-8 (Type UX)
Power Dissipation (Max)70.6 W, 2.7 W
Rds On (Max)4.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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