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FDI3632

FDI3632

Obsolete
ON Semiconductor

MOSFET N-CH 100V 12A/80A I2PAK

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FDI3632

FDI3632

Obsolete
ON Semiconductor

MOSFET N-CH 100V 12A/80A I2PAK

Find alt

Description

General part information

FDI3632

MOSFET N-CH 100V 12A/80A I2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFDI3632
Current - Continuous Drain (Id) (Ta)12 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)110 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)6000 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262 (I2PAK)
Power Dissipation (Max)310 W
QualificationAEC-Q101
Rds On (Max)9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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