
FDI3632
ObsoleteON Semiconductor
MOSFET N-CH 100V 12A/80A I2PAK

FDI3632
ObsoleteON Semiconductor
MOSFET N-CH 100V 12A/80A I2PAK
Description
General part information
FDI3632
MOSFET N-CH 100V 12A/80A I2PAK
Technical Specifications
Parameters and characteristics for this part
| Specification | FDI3632 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 110 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6000 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262 (I2PAK) |
| Power Dissipation (Max) | 310 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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