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W66BM6NBUAGJ

W66BM6NBUAGJ

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Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

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W66BM6NBUAGJ

W66BM6NBUAGJ

Active
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

Find alt

Description

General part information

W66BM6NBUAGJ

IC DRAM 2GBIT LVSTL 11 200WFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationW66BM6NBUAGJ
Access Time3.5 ns
Clock Frequency1866 MHz
Memory Depth128 M
Memory FormatDRAM
Memory Interface (Type)LVSTL_11
Memory Size2 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case200-WFBGA
Package Length10 mm
Package Name200-WFBGA
Package Width14.5 mm
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply (Range 1 Maximum)1.17 V
Voltage - Supply (Range 1 Minimum)1.06 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources