Description
General part information
BSZ019N03LSATMA1
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ019N03LSATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 22 A |
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 44 nC, 44 nC |
| Input Capacitance (Ciss) (Max) | 2800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-FL |
| Power Dissipation (Max) | 2.1 W, 69 W |
| Rds On (Max) | 1.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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