Description
General part information
ISZ113N10NM5LF2ATMA1
ISZ113N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 3.3x3.3 mm package, offering the industry’s lowest on-state resistance RDS(on)and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, ISZ113N10NM5LF2 is targeted for soft start and current limiting purpose in Power-over-Ethernet (PoE) application.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ113N10NM5LF2ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Current - Continuous Drain (Id) (Tc) | 63 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Input Capacitance (Ciss) (Max) | 2300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8 FL |
| Power Dissipation (Max) | 2.5 W, 100 W |
| Rds On (Max) | 11.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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