Description
General part information
IMBG120R181M2HXTMA1
TheCoolSiC™ MOSFETdiscrete 1200 V, 181 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG120R181M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 14.9 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.7 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | PG-TO263-7-12, D2PAK |
| Power Dissipation (Max) | 94 W |
| Rds On (Max) | 181.4 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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