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CMS120N080B

CMS120N080B

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Bruckewell

SIC N-MOSFET,1200V,35A,TO-263-7L

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CMS120N080B

CMS120N080B

Active
Bruckewell

SIC N-MOSFET,1200V,35A,TO-263-7L

Find alt

Description

General part information

CMS120N080B

SIC N-MOSFET,1200V,35A,TO-263-7L

Technical Specifications

Parameters and characteristics for this part

SpecificationCMS120N080B
Current - Continuous Drain (Id) (Tc)35 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads6 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)188 W
Rds On (Max)90 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive20 V
Vgs(th) (Max)4 V

Pricing

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