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Infineon Technologies AG-IPI50R299CPXKSA1 MOSFETs Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube

IPI126N10N3GXKSA1

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INFINEON

TRANS MOSFET N-CH 100V 58A 3-PIN(3+TAB) TO-262 TUBE

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Infineon Technologies AG-IPI50R299CPXKSA1 MOSFETs Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube

IPI126N10N3GXKSA1

Active
INFINEON

TRANS MOSFET N-CH 100V 58A 3-PIN(3+TAB) TO-262 TUBE

Find alt

Description

General part information

IPI126N10N3GXKSA1

N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO262-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI126N10N3GXKSA1
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)2500 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NamePG-TO262-3
Power Dissipation (Max)94 W
Rds On (Max)12.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

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