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SPD02N80C3ATMA1

SPD02N80C3ATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 800 V, 2 A, 2.4 OHM, TO-252 (DPAK), SURFACE MOUNT

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SPD02N80C3ATMA1

SPD02N80C3ATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 800 V, 2 A, 2.4 OHM, TO-252 (DPAK), SURFACE MOUNT

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Description

General part information

SPD02N80C3ATMA1

The SPD02N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for PC power, solar and adapter applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSPD02N80C3ATMA1
Current - Continuous Drain (Id) (Tc)2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)16 nC
Input Capacitance (Ciss) (Max)290 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)42 W
Rds On (Max)2.7 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.9 V

Pricing

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CAD

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Documents

Technical documentation and resources

    SPD02N80C3ATMA1 | INFINEON | Zenode.ai