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IPD050N03LGBTMA1

IPD050N03LGBTMA1

NRND
INFINEON

MOSFET N-CH 30V 50A TO252-31

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IPD050N03LGBTMA1

IPD050N03LGBTMA1

NRND
INFINEON

MOSFET N-CH 30V 50A TO252-31

Find alt

Description

General part information

IPD050N03LGBTMA1

MOSFET N-CH 30V 50A TO252-31

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD050N03LGBTMA1
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31 nC
Input Capacitance (Ciss) (Max)3200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-11
Power Dissipation (Max)68 W
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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CAD

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Documents

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