Description
General part information
ISC060N10NM6ATMA1
ISC060N10NM6OptiMOS™ 6 100 Vin normal level is setting the new technology standard in the field of discrete power MOSFETs. Infineon’s latest OptiMOS™ 6 MOSFET technology at 100 V utilizes a proprietary trench technology that enables higher power density, efficiency and ruggedness. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits. Infineon’sOptiMOS™ 6 industrial power MOSFET 100 Vis designed for high switching frequency application such astelecomandserver power supply, but also the ideal choice for other applications such assolar,power toolsanddrones. InSuperSO8 packageit achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on)x Qgand Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC060N10NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Current - Continuous Drain (Id) (Tc) | 97 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 33 nC |
| Input Capacitance (Ciss) (Max) | 2500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 125 W, 3 W |
| Rds On (Max) | 6 mOhm, 6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.3 V |
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