QS8J12TCR
NRNDRohm Semiconductor
MOSFET 2P-CH 12V 4.5A TSMT8
QS8J12TCR
NRNDRohm Semiconductor
MOSFET 2P-CH 12V 4.5A TSMT8
Description
General part information
QS8J12TCR
MOSFET 2P-CH 12V 4.5A TSMT8
Technical Specifications
Parameters and characteristics for this part
| Specification | QS8J12TCR |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 4.5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 1.5 V |
| Gate Charge (Max) | 40 nC |
| Input Capacitance (Ciss) (Max) | 4200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | Flat Leads, 8-SMD |
| Package Name | TSMT8 |
| Power - Max | 550 mW |
| Rds On (Max) | 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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