Specification	SIHH125N65E-T1-GE3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Input Capacitance (Ciss) (Max)	1938 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	174 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources