NVMYS4D6N06CTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 4.7 MΩ, 92 A, SINGLE N-CHANNEL NVMYS4D6N06CTWG
NVMYS4D6N06CTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 4.7 MΩ, 92 A, SINGLE N-CHANNEL NVMYS4D6N06CTWG
Description
General part information
NVMYS4D6N06CTWG
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMYS4D6N06CTWG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20.8 A |
| Current - Continuous Drain (Id) (Tc) | 92 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 19 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1530 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-LFPAK, SOT-1023 |
| Package Length | 5 mm |
| Package Name | LFPAK4 |
| Package Width | 6 mm |
| Power Dissipation (Max) | 4.1 W, 79.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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