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DMN3033LSNQ-7

DMN3033LSNQ-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3033LSNQ-7

DMN3033LSNQ-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN3033LSNQ-7

TN1.pdf

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3033LSNQ-7
Current - Continuous Drain (Id) (Ta)6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)755 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSC-59-3
Power Dissipation (Max)1.4 W
QualificationAEC-Q101
Rds On (Max)30 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.1 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources