VS-QA150BA10
ActiveVishay General Semiconductor - Diodes Division
POWER MODULE, GEN2 TRENCH MOS BA
VS-QA150BA10
ActiveVishay General Semiconductor - Diodes Division
POWER MODULE, GEN2 TRENCH MOS BA
Description
General part information
VS-QA150BA10
POWER MODULE, GEN2 TRENCH MOS BA
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-QA150BA10 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 150 A |
| Current - Reverse Leakage | 1.6 mA |
| Diode Configuration | Independent |
| Diode Count | 2 |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 1.08 V |
Pricing
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CAD
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Documents
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