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CY7C1062G30-10BGXI

CY7C1062G30-10BGXI

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SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 512K X 32BIT, BGA, 119 PINS, 2.2 V

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CY7C1062G30-10BGXI

CY7C1062G30-10BGXI

Active
INFINEON

SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 512K X 32BIT, BGA, 119 PINS, 2.2 V

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Description

General part information

CY7C1062G30-10BGXI

CY7C1062G30-10BGXI is a 16Mbit (512K words × 32bits), high-performance CMOS fast static RAM with error-correcting code (ECC). It has three chip enables, giving easy memory expansion features. To write to the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and write enable (active-low WE) input LOW. To read from the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input and output pins (I/O0 through I/O31) are placed in a high-impedance state when the device is deselected (active-low CE1, active-low CE2, or active-low CE3 HIGH), the outputs are disabled (active-low OE HIGH), the byte selects are disabled (active-low BA-D HIGH), or during a write operation (active-low CE1, active-low CE2 and active-low CE3 LOW and active-low WE LOW).

Technical Specifications

Parameters and characteristics for this part

SpecificationCY7C1062G30-10BGXI
Access Time10 ns
Memory Depth512 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size16 Mb
Memory TypeVolatile
Memory Width32 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case119-BGA
Package Length14 mm
Package Name119-PBGA
Package Width22 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.2 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

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