Description
General part information
CY7C1062G30-10BGXI
CY7C1062G30-10BGXI is a 16Mbit (512K words × 32bits), high-performance CMOS fast static RAM with error-correcting code (ECC). It has three chip enables, giving easy memory expansion features. To write to the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and write enable (active-low WE) input LOW. To read from the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input and output pins (I/O0 through I/O31) are placed in a high-impedance state when the device is deselected (active-low CE1, active-low CE2, or active-low CE3 HIGH), the outputs are disabled (active-low OE HIGH), the byte selects are disabled (active-low BA-D HIGH), or during a write operation (active-low CE1, active-low CE2 and active-low CE3 LOW and active-low WE LOW).
Technical Specifications
Parameters and characteristics for this part
| Specification | CY7C1062G30-10BGXI |
|---|---|
| Access Time | 10 ns |
| Memory Depth | 512 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 16 Mb |
| Memory Type | Volatile |
| Memory Width | 32 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 119-BGA |
| Package Length | 14 mm |
| Package Name | 119-PBGA |
| Package Width | 22 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.2 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
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