NTBG060N090SC1
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 60 MOHM, 900 V, M2, D2PAK-7L SILICON CARBIDE (SIC) MOSFET -… MORE
NTBG060N090SC1
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 60 MOHM, 900 V, M2, D2PAK-7L SILICON CARBIDE (SIC) MOSFET -… MORE
Description
General part information
NTBG060N090SC1
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTBG060N090SC1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5.8 A |
| Current - Continuous Drain (Id) (Tc) | 44 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 88 nC |
| Input Capacitance (Ciss) (Max) | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK-7, D2PAK |
| Power Dissipation (Max) | 211 W, 3.6 W |
| Rds On (Max) | 84 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 19 V |
| Vgs(th) (Max) | 4.3 V |
Pricing
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CAD
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