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GT060N04D3

GT060N04D3

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Goford Semiconductor

N40V,RD(MAX)<6.5M@10V,RD(MAX)<10

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GT060N04D3

GT060N04D3

Active
Goford Semiconductor

N40V,RD(MAX)<6.5M@10V,RD(MAX)<10

Find alt

Description

General part information

GT060N04D3

N40V,RD(MAX)<6.5M@10V,RD(MAX)<10

Technical Specifications

Parameters and characteristics for this part

SpecificationGT060N04D3
Current - Continuous Drain (Id) (Tc)40 A, 56 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)1280 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length3.15 mm
Package Name8-DFN
Package Width3.05 mm
Power Dissipation (Max)24 W, 60 W
Rds On (Max)6.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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