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XPJ102N09N8R-G

XPJ102N09N8R-G

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Torex Semiconductor Ltd

N-CHANNEL MOSFET 100V, 9.4MOHM,

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XPJ102N09N8R-G

XPJ102N09N8R-G

Active
Torex Semiconductor Ltd

N-CHANNEL MOSFET 100V, 9.4MOHM,

Find alt

Description

General part information

XPJ102N09N8R-G

N-CHANNEL MOSFET 100V, 9.4MOHM,

Technical Specifications

Parameters and characteristics for this part

SpecificationXPJ102N09N8R-G
Current - Continuous Drain (Id) (Tj)59.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)1780 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerTDFN
Package NameDFN5060-8L
Power Dissipation (Max)62.5 W
Rds On (Max)9.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

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