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FDI025N06

FDI025N06

Obsolete
ON Semiconductor

MOSFET N-CH 60V 265A I2PAK

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FDI025N06

FDI025N06

Obsolete
ON Semiconductor

MOSFET N-CH 60V 265A I2PAK

Find alt

Description

General part information

FDI025N06

MOSFET N-CH 60V 265A I2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFDI025N06
Current - Continuous Drain (Id) (Tc)265 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)226 nC
Input Capacitance (Ciss) (Max)14885 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262 (I2PAK)
Power Dissipation (Max)395 W
Rds On (Max)2.5 mOhm, 2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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Documents

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